Datasheet > IRFH4210PBF

IRFH4210PBF

更新时间： 2024-11-24 12:46:27

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	369K
描述
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

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中文翻译

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数据手册

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IRFH4210PBF 数据手册

FastIRFET™

IRFH4210PbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

1.10

m

(@ V_GS= 4.5V)

1.35

Qg _(typical)



I_D

245

(@T_{C (Bottom)}= 25°C)

PQFN 5X6 mm

Applications

Synchronous Rectifier MOSFET for Synchronous Buck Converters

Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

Active ORing and Hot Swap

Battery Operated DC Motor Inverters

Features

Benefits

Low R_DSon(<1.10m)

Low Thermal Resistance to PCB (<1.2°C/W)

Lower Conduction Losses

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Low Profile (<0.9 mm)

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFH4210PbF

PQFN 5mm x 6 mm

IRFH4210TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

245

155

400

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

3.6

Power Dissipation 

104

Linear Derating Factor 

0.029

W/°C

T_J

Operating Junction and

-55 to + 150

°C

T_STG

Storage Temperature Range

Notes  through  are on page 8

www.irf.com

August 07, 2013

12 3 4 5 6 7 8

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