Datasheet > IRFH4257DPBF

IRFH4257DPBF

更新时间： 2024-11-17 01:21:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	861K
描述
Control and synchronous MOSFETs in one package

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数据手册

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IRFH4257DPBF 数据手册

FastIRFET™

IRFH4257DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@V_GS= 4.5V)

4.70

9.7

1.80

m

Qg _(typical)

I_D

25

(@T_C= 25°C)

Applications

Control and Synchronous MOSFETs for synchronous buck

converters

Dual PQFN 5X4 mm

Features

Benefits

Control and synchronous MOSFETs in one package

Increased power density

Lower switching losses

Lower conduction losses

Lower Switching Losses

Environmentally friendlier

Increased reliability

Low charge control MOSFET (9.7nC typical)

results in

Low R_DSONsynchronous MOSFET (<1.8m)

Intrinsic Schottky Diode with Low Forward Voltage on Q2

RoHS Compliant, Halogen-Free



MSL1, Industrial Qualification

Base part number

Package Type

Standard Pack

Orderable Part Number

IRFH4257DTRPbF

Form

Quantity

4000

IRFH4257DPbF

Dual PQFN 5mm x 4mm

Tape and Reel

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Q1 Max.

Q2 Max.

Units

V_GS

± 20

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 4.5V

68

54

111

88

I_D@ T_C= 70°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 4.5V

(Source Bonding Technology Limited)

25

I_DM

Pulsed Drain Current

Power Dissipation

120

375

P_D@T_C= 25°C

P_D@T_C= 70°C

W/°C

°C

Linear Derating Factor

0.20

0.22

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

Junction-to-Case 

5.0

4.5

R_JC(Bottom)

R_JC(Top)

R_JA

Junction-to-Case 

°C/W

Junction-to-Ambient 

R_JA(<10s)

Notes  through  are on page 12

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