Datasheet > IRFH5025PBF

IRFH5025PBF

更新时间： 2024-11-16 12:33:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	229K
描述
Secondary Side Synchronous Rectification

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中文翻译

获取价格

数据手册

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IRFH5025PBF 数据手册

PD -97538A

IRFH5025PbF

HEXFET^®Power MOSFET

V_DS

250

100

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

R_{G (typical)}

I_D

1.6

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Features

Benefits

Low R_DSon

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Thermal Resistance to PCB ( 0.8°C/W)

100% Rg tested

≤

Low Profile ( 0.9 mm)

results in Increased Power Density

≤

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Quantity

IRFH5025TRPBF

IRFH5025TR2PBF

PQFN 5mm x 6mm

Tape and Reel

4000

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

250

± 20

3.8

3.1

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C(Top)= 25°C

I_D@ T_C(Top)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.7

3.7

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Top)= 25°C

3.6

8.3

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.07

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through ꢀ are on page 8

www.irf.com

09/19/12

12 3 4 5 6 7 8

中文翻译

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