IRFH5053PBF

更新时间： 2024-11-16 11:09:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	254K
描述
HEXFETPower MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFH5053PBF 数据手册

PD - 97359

IRFH5053PbF

HEXFET^®Power MOSFET

Applications

3 Phase Boost Converter Applications

V_DSS

R_DS(on)max

Secondary Side Synchronous Rectification

18m @V = 10V

Ω

100V

24nC

Benefits

Very low R_DS(ON)at 10V V_GS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for R_G

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

PQFN

Large Source Lead for more reliable Soldering

Absolute Maximum Ratings

Parameter

Max.

100

± 20

9.3

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

7.4

Power Dissipation

@T_A= 25°C

@T_A= 70°C

3.1

W/°C

°C

Power Dissipation

2.0

Linear Derating Factor

Operating Junction and

0.025

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

1.6

Units

Junction-to-Case

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

Notes through ꢀ are on page 9

www.irf.com

12/16/08

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFH5053PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFH5053TRPBF	INFINEON	获取价格	3 Phase Boost Converter Applications
IRFH5104PBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5104PBF_15	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5104TR2PBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
IRFH5104TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
IRFH5106PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5106TR2PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5106TRPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5110PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5110TR2PBF	INFINEON	获取价格	HEXFET Power MOSFET