Datasheet > IRFH5015

IRFH5015

更新时间： 2024-10-15 11:15:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	278K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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数据手册

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IRFH5015 数据手册

IRFH5015PbF

HEXFET^®Power MOSFET

V_DS

150

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

mΩ

R_{G (typical)}

1.7

I_D

PQFN 5X6 mm

(@T_mb= 25°C)

Applications

• Primary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• BoostConverters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 31 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Lower Conduction Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFH5015PBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5015TRPBF

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

150

± 20

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_mb= 25°C

I_D@ T_mb= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.2

220

3.6

156

Power Dissipation

P_D@T_A= 25°C

P_D@ T_mb= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through ꢀ are on page 9

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