Datasheet > 晶体管 > 功率场效应晶体管> IRFH5007TR2PBF

IRFH5007TR2PBF

更新时间： 2024-10-14 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	332K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFH5007TR2PBF 数据手册

PD-95958

IRFH5007PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

5.9

Ω

R_{G (typical)}

1.2

Ω

I_D

100

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Benefits

Features

Low R_DSon(≤ 5.9mΩ)

Low Thermal Resistance to PCB (≤ 0.5°C/W)

100% Rg tested

Lower Conduction Losses

Enables Better Thermal Dissipation

Increased Reliability

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

1000

IRFH5007TRPBF

IRFH5007TR2PBF

PQFN 5mm x 6mm

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

±20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

400

3.6

250

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

Linear Derating Factor

0.029

-55 to + 150

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 8

www.irf.com

03/12/10

12 3 4 5 6 7 8

中文翻译

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IRFH5007TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH5007TRPBF	INFINEON	类似代替	HEXFET Power MOSFET

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