Datasheet > IRFH5015TR2PBF

IRFH5015TR2PBF

更新时间： 2024-11-16 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	215K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFH5015TR2PBF 数据手册

PD - 97446

IRFH5015PbF

HEXFET^®Power MOSFET

V_DS

150

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

Ω

R_{G (typical)}

1.7

Ω

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Primary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• BoostConverters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 31 mΩ)

Low Thermal Resistance to PCB (<0.5°C/W)

Lower Conduction Losses

Increased Power Density

100% Rg tested

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5015TRPBF

IRFH5015TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

150

± 20

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.2

220

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

250

Linear Derating Factor

0.029

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through ꢀ are on page 8

www.irf.com

01/22/2010

12 3 4 5 6 7 8

中文翻译

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IRFH5015TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH5015TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

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