Datasheet > IRFH5020PBF

IRFH5020PBF

更新时间： 2024-11-16 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	340K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFH5020PBF 数据手册

PD -97428

IRFH5020PbF

HEXFET^®Power MOSFET

V_DS

200

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

1.9

R_{G (typical)}

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Features

Benefits

Low R_DSon

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Thermal Resistance to PCB (≤ 0.5°C/W)

100% Rg tested

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5020TRPBF

IRFH5020TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

200

± 20

5.1

4.1

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C(Top)= 25°C

I_D@ T_C(Top)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.8

4.9

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Top)= 25°C

3.6

8.3

Power Dissipation

Linear Derating Factor

Operating Junction and

0.07

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through ꢀ are on page 8

www.irf.com

10/7/09

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFH5020PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFH5020TR2PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5020TRPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5025PBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5025TRPBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5053	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFH5053PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFH5053TRPBF	INFINEON	获取价格	3 Phase Boost Converter Applications
IRFH5104PBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5104PBF_15	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5104TR2PBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me