Datasheet > IRFH5010PBF_15

IRFH5010PBF_15

更新时间： 2024-10-15 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	260K
描述
Secondary Side Synchronous Rectification

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中文翻译

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数据手册

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IRFH5010PBF_15 数据手册

IRFH5010PbF

HEXFET^®Power MOSFET

V_DS

100

9.0

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

R_{G (typical)}

1.2

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

FeaturesandBenefits

Features

Benefits

Low RDSon (< 9 mΩ)

Low Thermal Resistance to PCB (<0.5°C/W)

Lower Conduction Losses

Increased Power Density

100% Rg tested

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

4000

IRFH5010TRPBF

IRFH5010TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

100

± 20

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

400

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

250

Linear Derating Factor

0.029

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 9.

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Ma1y9, 2015

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