Datasheet > IRFH4226PBF_15

IRFH4226PBF_15

更新时间： 2024-11-17 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	501K
描述
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

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数据手册

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IRFH4226PBF_15 数据手册

FastIRFET™

IRFH4226PbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

2.4

m

(@ V_GS= 4.5V)

3.3

Qg _(typical)

I_D

70

PQFN 5X6 mm

(@T_{C (Bottom)}= 25°C)

Applications

Control MOSFET for Sync Buck Converters

Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

Features

Benefits

Low Charge (typical 16 nC)

Low R_DSon(<2.4 m)

Low Thermal Resistance to PCB (<2.7 °C/W)

Low Switching Losses

Lower Conduction Losses

Enable better Thermal Dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Low Profile (<0.9 mm)

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Base part number

Package Type

Orderable Part Number

Form

Quantity

IRFH4226PbF

PQFN 5mm x 6 mm

Tape and Reel

4000

IRFH4226TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

110

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

70

I_DM

460

3.4

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.027

W/°C

T_J

-55 to + 150

°C

T_STG

Notes  through  are on page 9

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March 11, 2015

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