Datasheet > IRFH4251DPBF

IRFH4251DPBF

更新时间： 2024-11-16 12:29:15

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
13页	327K
描述
Control and Synchronous MOSFETs for synchronous buck converters

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中文翻译

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数据手册

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IRFH4251DPBF 数据手册

IRFH4251DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@V_GS= 4.5V)

4.60

10

1.10

m

Qg _(typical)

I_D

45

(@T_C= 25°C)

Applications

Control and Synchronous MOSFETs for synchronous buck

converters

DUAL PQFN 5X6 mm

Benefits

Features

Control and synchronous MOSFETs in one package

Increased power density

Lower switching losses

Lower conduction losses

Lower Switching Losses

Environmentally friendlier

Increased reliability

Low charge control MOSFET (10nC typical)

results in

Low R_DSONsynchronous MOSFET (<1.10m)

Intrinsic Schottky Diode with Low Forward Voltage on Q2

RoHS Compliant, Halogen-Free



MSL2, Industrial Qualification

Base part number

Package Type

Standard Pack

Orderable Part Number

IRFH4251DTRPbF

Form

Quantity

4000

IRFH4251DPbF

Dual PQFN 5mm x 6mm

Tape and Reel

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 4.5V

Q1 Max.

Q2 Max.

Units

V_GS

± 20

I_D@ T_C= 25°C

64

51

188

151

I_D@ T_C= 70°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 4.5V

(Source Bonding Technology Limited)

45

I_DM

Pulsed Drain Current

Power Dissipation

120

750

P_D@T_C= 25°C

P_D@T_C= 70°C

Linear Derating Factor

0.25

0.50

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

Junction-to-Case 

4.0

2.0

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

Junction-to-Case 

Junction-to-Ambient 

R_JA(<10s)

Notes  through  are on page 12

www.irf.com

June 10, 2013

12 3 4 5 6 7...13

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