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IRFH4234PBF PDF预览

IRFH4234PBF

更新时间: 2024-11-05 12:46:27
品牌 Logo 应用领域
英飞凌 - INFINEON 转换器
页数 文件大小 规格书
9页 253K
描述
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters

IRFH4234PBF 数据手册

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FastIRFET™  
IRFH4234PbF  
HEXFET® Power MOSFET  
VDSS  
25  
V
RDS(on) max  
(@ VGS = 10V)  
4.6  
m  
(@ VGS = 4.5V)  
7.3  
8.2  
Qg (typical)  
nC  
A
ID  
60  
PQFN 5X6 mm  
(@TC (Bottom) = 25°C)  
Applications  
Control MOSFET for Sync Buck Converters  
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters  
Features  
Benefits  
Low Charge (typical 8.2 nC)  
Low RDSon (<4.6 m)  
Low Thermal Resistance to PCB (<4.6 °C/W)  
Low Switching Losses  
Lower Conduction Losses  
Enable better Thermal Dissipation  
Increased Power Density  
Multi-Vendor Compatibility  
Easier Manufacturing  
Low Profile (<0.9 mm)  
results in  
Industry-Standard Pinout  
  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial Qualification  
Environmentally Friendlier  
Increased Reliability  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
IRFH4234PbF  
PQFN 5mm x 6 mm  
IRFH4234TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
± 20  
22  
Units  
VGS  
V
A
ID @ TA = 25°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
60  
38  
240  
3.5  
PD @TA = 25°C  
PD @TC(Bottom) = 25°C  
Power Dissipation   
W
Power Dissipation   
27  
Linear Derating Factor   
0.028  
W/°C  
°C  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Notes through are on page 8  
1
www.irf.com  
© 2013 International Rectifier  
August 16, 2013  

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