Datasheet > IRFH4210DPBF

IRFH4210DPBF

更新时间： 2024-11-16 12:08:39

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	256K
描述
Synchronous Rectifier MOSFET for Synchronous Buck Converters

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中文翻译

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数据手册

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IRFH4210DPBF 数据手册

FastIRFET™

IRFH4210DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

1.10

m

(@ V_GS= 4.5V)

1.35

37.0

Qg _(typical)

I_D

100

PQFN 5X6 mm

(@T_{C (Bottom)}= 25°C)

Applications

Synchronous Rectifier MOSFET for Synchronous Buck Converters

Features

Benefits

Low R_DS(ON)(<1.10 m)

Lower Conduction Losses

Lower Switching Losses

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Schottky Intrinsic Diode with Low Forward Voltage

Low Thermal Resistance to PCB (<1.0°C/W)

Low Profile (<0.9 mm)

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFH4210DPbF

PQFN 5mm x 6 mm

IRFH4210DTRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 10V

266

168

100

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

I_DM

Pulsed Drain Current 

Power Dissipation 

400

3.5

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

125

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.028

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 8

www.irf.com

August 16, 2013

12 3 4 5 6 7 8

中文翻译

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