Datasheet > IRFH3707

IRFH3707

更新时间： 2024-11-25 14:53:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	310K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFH3707 数据手册

PD - 96227B

IRFH3707PbF

HEXFET^®Power MOSFET

Applications

l Synchronous Buck Converter for Computer

Processor Power

l Isolated DC to DC Converters for Network and

Telecom

l Buck Converters for Set-Top Boxes

V_DSS

30V

R_DS(on)max

12.4m @V_GS= 10V

5.4nC

l System/load switch

Benefits

Low R_DS(ON)

Very Low Gate Charge

Low Junction to PCB Thermal Resistance

Fully Characterized Avalanche Voltage and

Current

100% Tested for R_G

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

3mm x 3mm PQFN

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

9.4

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Power Dissipation

@T_A= 25°C

@T_A= 70°C

2.8

1.8

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

STG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

7.5

Units

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (t<10s)

R_θJC

R_θJA

–––

°C/W

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

09/17/10

12 3 4 5 6 7...11

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