IRFG110

更新时间： 2024-11-04 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	223K
描述
POWER MOSFET THRU-HOLE (MO-036AB)

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IRFG110 数据手册

PD - 90396G

IRFG110

JANTX2N7334

JANTXV2N7334

POWER MOSFET

THRU-HOLE (MO-036AB)

REF:MIL-PRF-19500/597

100V, QUAD N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFG110

0.7 Ω

1.0A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

1.0

0.6

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

4.0

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

04/16/02

12 3 4 5 6 7

中文翻译

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IRFG110 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N7334	INFINEON	完全替代	100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging

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IRFG1Z0	INFINEON	获取价格	Power Field-Effect Transistor, 0.45A I(D), 100V, 3ohm, 4-Element, N-Channel, Silicon, Meta
IRFG5110	INFINEON	获取价格	100V, Combination 2N-2P-CHANNEL
IRFG5210	INFINEON	获取价格	200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
IRFG6110	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
IRFG6110	SEME-LAB	获取价格	14 LEAD DUAL IN LINE QUAD
IRFG6110PBF	INFINEON	获取价格	暂无描述
IRFG6113	ETC	获取价格	TRANSISTOR \| MOSFET \| ARRAY \| COMPLEMENTARY \| 60V V(BR)DSS \| 850MA I(D) \| DIP
IRFG9110	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
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