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IRFG9110 PDF预览

IRFG9110

更新时间: 2024-11-04 22:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 220K
描述
POWER MOSFET THRU-HOLE (MO-036AB)

IRFG9110 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:IN-LINE, R-CDIP-T14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):75 mJ
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):0.75 A最大漏极电流 (ID):0.75 A
最大漏源导通电阻:1.73 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-036ABJESD-30 代码:R-CDIP-T14
JESD-609代码:e0元件数量:4
端子数量:14工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.4 W最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFG9110 数据手册

 浏览型号IRFG9110的Datasheet PDF文件第2页浏览型号IRFG9110的Datasheet PDF文件第3页浏览型号IRFG9110的Datasheet PDF文件第4页浏览型号IRFG9110的Datasheet PDF文件第5页浏览型号IRFG9110的Datasheet PDF文件第6页浏览型号IRFG9110的Datasheet PDF文件第7页 
PD - 90397G  
IRFG9110  
JANTX2N7335  
JANTXV2N7335  
REF:MIL-PRF-19500/599  
100V, QUAD P-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
POWER MOSFET  
THRU-HOLE (MO-036AB)  
Product Summary  
Part Number RDS(on) ID  
IRFG9110  
1.4-0.75A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state resis-  
tance combined with high transconductance. HEXFET tran-  
sistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
MO-036AB  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-0.75  
-0.5  
D
GS  
C
A
I
D
= -10V, T = 100°C Continuous Drain Current  
C
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
-3.0  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
75  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
AR  
dv/dt  
-5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
1.3 (typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
04/16/02  

IRFG9110 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7335 INFINEON

完全替代

POWER MOSFET THRU-HOLE (MO-036AB)
JANTX2N7335 INFINEON

完全替代

POWER MOSFET THRU-HOLE (MO-036AB)

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