是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 25 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF9232 | RENESAS |
获取价格 |
3.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF9233 | RENESAS |
获取价格 |
3.5A, 150V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFF9233 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Met |
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IRFF9233 | ROCHESTER |
获取价格 |
3.5A, 150V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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IRFG110 | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (MO-036AB) |
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IRFG110 | SEME-LAB |
获取价格 |
14 LEAD DUAL IN LINE QUAD |
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IRFG110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal |
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IRFG1Z0 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.45A I(D), 100V, 3ohm, 4-Element, N-Channel, Silicon, Meta |
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IRFG5110 | INFINEON |
获取价格 |
100V, Combination 2N-2P-CHANNEL |
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IRFG5210 | INFINEON |
获取价格 |
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY |
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