IRFG6110PBF

更新时间： 2024-11-05 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管脉冲局域网
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12页	395K
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替代型号

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IRFG6110PBF 数据手册

PD - 90436F

IRFG6110

JANTX2N7336

JANTXV2N7336

REF:MIL-PRF-19500/598

100V, Combination 2N-2P-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number

IRFG6110

RDS(on)

0.7Ω

CHANNEL

1.0A

-0.75A

1.4Ω

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance. HEXFET tran-

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Electrically Isolated

n Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings (Per Die)

Parameter

=± 10V, T = 25°C Continuous Drain Current

=± 10V, T = 100°C Continuous Drain Current

N-Channel

1.0

P-Channel

-0.75

-0.5

Units

@ V

0.6

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

4.0

-3.0

@ T = 25°C

1.4

W/°C

0.011

±20

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current ➀

75 ➀

—

75➀➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt

Operating Junction

—

V/ns

dv/dt

5.5 ➀

-5.5 ➀

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

04/16/02

12 3 4 5 6 7...12

中文翻译

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IRFG6110PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFG6110	INFINEON	功能相似	POWER MOSFET THRU-HOLE (MO-036AB)
JANTXV2N7336	INFINEON	功能相似	POWER MOSFET THRU-HOLE (MO-036AB)
JANTX2N7336	INFINEON	功能相似	POWER MOSFET THRU-HOLE (MO-036AB)

与IRFG6110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFG6113	ETC	获取价格	TRANSISTOR \| MOSFET \| ARRAY \| COMPLEMENTARY \| 60V V(BR)DSS \| 850MA I(D) \| DIP
IRFG9110	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
IRFG9113	ETC	获取价格	TRANSISTOR \| MOSFET \| ARRAY \| P-CHANNEL \| 60V V(BR)DSS \| 650MA I(D) \| DIP
IRFGIH50F	ETC	获取价格
IRFH150	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
IRFH150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
IRFH250	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 30A I(D) \| TO-210AC
IRFH250PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRFH350	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 15A I(D) \| TO-210AC
IRFH350PBF	INFINEON	获取价格	Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta

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