是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.44 |
配置: | SINGLE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 2.5 A | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF9222 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal |
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IRFF9223 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal |
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IRFF9230 | INFINEON |
获取价格 |
HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
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IRFF9230 | INTERSIL |
获取价格 |
-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET |
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IRFF9230 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |
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IRFF9230 | SEME-LAB |
获取价格 |
P-Channel MOSFET in a Hermetically sealed TO39 |
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IRFF9230 | NJSEMI |
获取价格 |
Trans MOSFET P-CH 200V 4A 3-Pin TO-39 |
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IRFF9230-2 | VISHAY |
获取价格 |
TRANSISTOR 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205, FET General Purpose |
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IRFF9231 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |
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IRFF9231 | RENESAS |
获取价格 |
4A, 150V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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