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IRFF9220 PDF预览

IRFF9220

更新时间: 2024-02-29 16:07:04
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 330K
描述
-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs

IRFF9220 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
风险等级:5.64雪崩能效等级(Eas):180 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):2.5 A最大漏源导通电阻:1.725 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):10 A表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFF9220 数据手册

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IRFF9220  
Data Sheet  
July 1998  
File Number 2288.2  
-2.5A, -200V, 1.5 Ohm, P-Channel Power  
MOSFETs  
Features  
• -2.5A, -200V  
• r = 1.5  
These are advanced power MOSFETs designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. They are P-Channel  
enhancement mode silicon gate power field effect transistors  
designed for applications such as switching regulators,  
switching converters, motor drivers, relay drivers and drivers for  
high power bipolar switching transistors requiring high speed  
and low gate drive power. These types can be operated directly  
from integrated circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
Formerly develpomental type TA17502.  
D
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
G
IRFF9220  
TO-205AF  
IRFF9220  
NOTE: When ordering, use the entire part number.  
S
Packaging  
JEDEC TO-205AF  
DRAIN  
(CASE)  
SOURCE  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-107  

IRFF9220 替代型号

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