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IRFF9130 PDF预览

IRFF9130

更新时间: 2024-11-20 22:31:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 330K
描述
-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

IRFF9130 数据手册

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IRFF9130  
Data Sheet  
February 1999  
File Number 2216.3  
-6.5A, -100V, 0.300 Ohm, P-Channel Power  
MOSFET  
Features  
• -6.5A, -100V  
• r = 0.300  
This P-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
Formerly developmental type TA17511.  
D
Ordering Information  
G
PART NUMBER  
PACKAGE  
BRAND  
IRFF9130  
IRFF9130  
TO-205AF  
S
NOTE: When ordering, include the entire part number.  
Packaging  
JEDEC TO-205AF  
DRAIN  
(CASE)  
SOURCE  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-101  

IRFF9130 替代型号

型号 品牌 替代类型 描述 数据表
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