Datasheet > IRFF9130_11

IRFF9130_11

更新时间： 2024-01-22 06:04:35

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
3页	204K
描述
P-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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IRFF9130_11 数据手册

P-CHANNEL

POWER MOSFET

IRFF9130 / 2N6849

•

MOSFET Transistor In A Hermetic Metal TO-205AF Package

Single Pulse Avalanche Energy Rated

Designed For Switching, Power Supply,

Motor Control and Amplifier Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Drain – Source Voltage

-100V

= 20KΩ

Drain – Gate Voltage

-100V

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation at

20V

T = 25°C

T = 100°C

-6.5A

-4.1A

-25A

T = 25°C

25W

Derate Above 25°C

0.2W/°C

500mJ

Single Pulse Avalanche Energy ⁽²⁾⁽⁴⁾

Junction Temperature Range

Storage Temperature Range

-55 to +150°C

stg

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

°C/W

Thermal Resistance, Junction To Case

Thermal Resistance, Junction To Ambient

θJC

175

θJA

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Typ.

Units

L + L

Total Inductance

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) @V = -25V, Starting T = 25°C, L = 17.25mH, Peak I = -6.5A, V = -10V

(3) Pulse Width ≤ 300us, δ ≤ 2%

(4) By Design Only, Not A Production Test.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 3098

Issue 2

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

中文翻译

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与IRFF9130_11相关器件

型号	品牌	获取价格	描述	数据表
IRFF9131	VISHAY	获取价格	Power Field-Effect Transistor, 6.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta
IRFF9131	NJSEMI	获取价格	Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
IRFF9132	VISHAY	获取价格	Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Met
IRFF9132	NJSEMI	获取价格	Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
IRFF9132	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Met
IRFF9133	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Meta
IRFF9133	NJSEMI	获取价格	Trans MOSFET P-CH 80V 6.5A 3-Pin TO-39
IRFF9133	RENESAS	获取价格	5.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF9133	ROCHESTER	获取价格	6.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF9133	VISHAY	获取价格	Power Field-Effect Transistor, 5.5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Meta