Datasheet > IRFB7440GPBF

IRFB7440GPBF

更新时间： 2024-11-24 21:19:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	268K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

数据手册

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IRFB7440GPBF 数据手册

StrongIRFET

IRFB7440GPbF

HEXFET^®Power MOSFET

Applications

V_DSS

40V

l Brushed Motor drive applications

l BLDC Motor drive applications

l Battery powered circuits

l Half-bridge and full-bridge topologies

l Synchronous rectifier applications

l Resonant mode power supplies

l OR-ing and redundant power switches

l DC/DC and AC/DC converters

l DC/AC Inverters

R_DS(on)typ.

2.0m

2.5m

208A

max.

I_D

120A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

TO-220AB

IRFB7440GPbF

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

Gate

Drain

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Source

l Halogen-Free

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFB7440GPbF

TO-220

Tube

IRFB7440GPbF

7.0

6.0

5.0

4.0

3.0

2.0

1.0

240

200

160

120

= 100A

Limited By Package

= 125°C

= 25°C

10 12 14

16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

July 11, 2013

12 3 4 5 6 7...10

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