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IRF9383MTRPBF

更新时间： 2024-11-20 19:58:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 278K
描述
Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

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IRF9383MTRPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：1.16Samacsys Description：Infineon IRF9383MTRPBF P-channel MOSFET, 22 A, 30 V DirectFET, HEXFET, 3+Tab-Pin MX
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：22 A
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.0029 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：113 W
最大脉冲漏极电流 (IDM)：180 A子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF9383MTRPBF 数据手册

 浏览型号IRF9383MTRPBF的Datasheet PDF文件第2页浏览型号IRF9383MTRPBF的Datasheet PDF文件第3页浏览型号IRF9383MTRPBF的Datasheet PDF文件第4页浏览型号IRF9383MTRPBF的Datasheet PDF文件第5页浏览型号IRF9383MTRPBF的Datasheet PDF文件第6页浏览型号IRF9383MTRPBF的Datasheet PDF文件第7页 
IRF9383MPbF  
DirectFET® P-Channel Power MOSFET ‚  
Typical values (unless otherwise specified)  
Applications  
VDSS  
-30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
l Isolation Switch for Input Power or Battery Application  
l High Side Switch for Inverter Applications  
2.3mΩ@-10V 3.8mΩ@-4.5V  
Qg tot  
Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
Features and Benefits  
67nC  
29nC  
9.4nC 315nC 59nC  
-1.8V  
l Environmentaly Friendly Product  
l RoHs Compliant Containing no Lead,  
no Bromide and no Halogen  
S
G
D
l Common-Drain P-Channel MOSFETs Provides  
High Level of Integration and Very Low RDS(on)  
D
S
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
MC  
Description  
The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET®  
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET®  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance  
by 80%.  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4800  
1000  
IRF9383MTRPbF  
IRF9383MTR1PbF  
DirectFET Medium Can  
DirectFET Medium Can  
"TR1" suffix EOL notice #264  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±20  
-22  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
-17  
@ TA = 70°C  
@ TC = 25°C  
A
-160  
-180  
DM  
12  
10  
8
14.0  
12.0  
10.0  
8.0  
I = -18A  
D
I
= -22A  
D
V
V
V
= -24V  
= -15V  
= -6.0V  
DS  
DS  
DS  
6
6.0  
T = 125°C  
J
4
4.0  
2
2.0  
T
= 25°C  
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
20 40 60 80 100 120 140 160 180  
Total Gate Charge (nC)  
Q
G
-V  
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
February 28, 2014  
1
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IRF9383MTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9383MTR1PBF INFINEON

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 Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, P-Channel, Silicon, Me

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