是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.22 | 雪崩能效等级(Eas): | 200 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9510-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal | |
IRF9510-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal | |
IRF9510-013PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal | |
IRF9510F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9510FPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9510FXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9510PBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRF9510PBF | KERSEMI |
获取价格 |
Power MOSFET | |
IRF9510PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRF9510S | VISHAY |
获取价格 |
Power MOSFET |