Datasheet > IRF9510S, SiHF9510S

IRF9510S, SiHF9510S

更新时间： 2024-11-22 14:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	196K
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Power MOSFET

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IRF9510S, SiHF9510S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

D²PAK (TO-263)

• Dynamic dV/dt rating

• Repetitive avalanche rated

• P-channel

Available

• 175 °C operating temperature

• Fast switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

P-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

-100

DESCRIPTION

R_DS(on)(Ω)

V_GS= -10 V

1.2

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gmax. (nC)

8.7

2.2

4.1

Q_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF9510S-GE3

IRF9510SPbF

D²PAK (TO-263)

SiHF9510STRL-GE3 ^a

IRF9510STRLPbF ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

IRF9510STRRPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-100

_C= 25 °C

-4.0

Continuous Drain Current

V_GSat -10 V

I_D

T_C= 100 °C

-2.8

Pulsed Drain Current ^a

I_DM

-16

Linear Derating Factor

0.29

0.025

200

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Avalanche Current^a

E_AS

I_AR

-4.0

Repetiitive Avalanche Energy ^a

E_AR

4.3

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

3.7

dV/dt

-5.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= - 25 V, starting T_J= 25 °C, L = 18 mH, R_g= 25 Ω, I_AS= - 4.0 A (see fig. 12)

c. I_SD≤ - 4.0 A, dI/dt ≤ 75 A/μs, V_DD≤ V_DS, T_J≤ 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0904-Rev. D, 30-Aug-2021

Document Number: 91073

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF9510S, SiHF9510S相关器件

型号	品牌	获取价格	描述	数据表
IRF9510SPBF	VISHAY	获取价格	Power MOSFET
IRF9510STRL	VISHAY	获取价格	Power MOSFET
IRF9510STRLPBF	VISHAY	获取价格	Power MOSFET
IRF9510STRR	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal
IRF9510STRR	VISHAY	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal
IRF9510STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal
IRF9511	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-
IRF9511	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-
IRF9512	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 2.5A I(D) \| TO-220AB
IRF9513	SAMSUNG	获取价格	Power Field-Effect Transistor, 5A I(D), 60V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-

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