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IRF9520

更新时间： 2024-11-19 14:54:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 131K
描述
Power MOSFET

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IRF9520 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.27
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：300 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：6.8 A
最大漏极电流 (ID)：6.8 A最大漏源导通电阻：0.6 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：60 W最大脉冲漏极电流 (IDM)：27 A
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

IRF9520 数据手册

 浏览型号IRF9520的Datasheet PDF文件第2页浏览型号IRF9520的Datasheet PDF文件第3页浏览型号IRF9520的Datasheet PDF文件第4页浏览型号IRF9520的Datasheet PDF文件第5页浏览型号IRF9520的Datasheet PDF文件第6页浏览型号IRF9520的Datasheet PDF文件第7页 
IRF9520  
Vishay Siliconix  
www.vishay.com  
Power MOSFET  
FEATURES  
S
• Dynamic dv/dt rating  
• Repetitive avalanche rated  
• P-channel  
• 175 °C operating temperature  
• Fast switching  
TO-220AB  
Available  
Available  
G
• Ease of paralleling  
• Simple drive requirements  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
D
G
D
P-Channel MOSFET  
Note  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details  
PRODUCT SUMMARY  
VDS (V)  
-100  
R
DS(on) (Ω)  
VGS = -10 V  
0.60  
DESCRIPTION  
Qg max. (nC)  
18  
3.0  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
Q
gs (nC)  
gd (nC)  
Q
9.0  
Configuration  
Single  
The TO-220AB package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220AB contribute to its  
wide acceptance throughout the industry.  
ORDERING INFORMATION  
Package  
TO-220AB  
Lead (Pb)-free  
IRF9520PbF  
IRF9520PbF-BE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
-100  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
T
C = 25 °C  
-6.8  
-4.8  
-27  
Continuous drain current  
VGS at 10 V  
ID  
T
C = 100 °C  
A
Pulsed drain current a  
IDM  
Linear derating factor  
0.40  
300  
W/°C  
mJ  
A
Single pulse avalanche energy b  
Repetitive avalanche current a  
Repetitive avalanche energy a  
Maximum power dissipation  
EAS  
IAR  
-6.8  
6.0  
EAR  
mJ  
W
TC = 25 °C  
PD  
60  
Peak diode recovery dV/dt c  
dv/dt  
TJ, Tstg  
-5.5  
-55 to +175  
300  
V/ns  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
°C  
For 10 s  
10  
lbf · in  
N · m  
Mounting torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = -25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 Ω, IAS = -6.8 A (see fig. 12)  
c. ISD ≤ -6.8 A, di/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C  
d. 1.6 mm from case  
S21-0852-Rev. C, 16-Aug-2021  
Document Number: 91074  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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