生命周期: | Transferred | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.06 | Is Samacsys: | N |
雪崩能效等级(Eas): | 380 mJ | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 6.8 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 60 W | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 115 ns |
最大开启时间(吨): | 150 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9520-002PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520-004PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520-007PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520-031 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520-031PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF9520CHP | VISHAY |
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Transistor | |
IRF9520F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9520FX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9520FXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |