Datasheet > IRF9388TR

IRF9388TR

更新时间： 2024-10-15 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	520K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-12A;Vgs(th)(V):±25;漏源导通电阻:11.9mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9388TR 数据手册

UMW

IRF9388

-30V P-Channel MOSFET

Applications

Adaptor Input Switch for Notebook PC

•

Features

VDS (V) =-30V

•

ID= -12A

(V = -10V)

•

SOP-8

RDS(ON) ＜ 11.9m

Ω(V

=-10V)

•

Features and Benefits

Resulting Benefits

Features

25V V_GSmax

Direct Drive at High V_GS

Industry-Standard SO8 Package

Multi-Vendor Compatibility

Environmentally Friendlier

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Absolute Maximum Ratings

Max.

-30

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 25

-12

@ T_A= 25°C

-9.6

@ T_A= 70°C

-96

2.5

@T_A= 25°C

@T_A= 70°C

Power Dissipation

W/°C

°C

1.6

Power Dissipation

0.02

Linear Derating Factor

-55 to + 150

Operating Junction and

Storage Temperature Range

STG

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF9388TR相关器件

型号	品牌	获取价格	描述	数据表
IRF9388TRPBF	INFINEON	获取价格	Adaptor Input Switch for Notebook PC
IRF9389	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRF9389PBF	INFINEON	获取价格	High and Low Side Switches for Inverter
IRF9389TR	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N：30V ;P：-30V;持续漏极电
IRF9389TRPBF	INFINEON	获取价格	High and Low Side Switches for Inverter
IRF9392PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M
IRF9392TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M
IRF9393	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRF9393PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, M
IRF9393TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, M