Datasheet > IRF9394MTRPBF

IRF9394MTRPBF

更新时间： 2024-11-18 19:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	443K
描述
Power Field-Effect Transistor

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技术参数
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IRF9394MTRPBF 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

IRF9394MTRPBF 数据手册

APPROVED (NOT RELEASED)

IRF9394MPbF

DirectFET™ dual P-Channel Power MOSFET 

Typical values (unless otherwise specified)

Applications

V_DSS

V_GS

R_DS(on)

 Isolation Switch for Input Power or Battery Application

-30V max ±20V max

5.3m@-10V 8.5m@-4.5V

Features and Benefits

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

Environmentally Friendly Product

ROHS compliant, Halogen-Free

Dual Common-Drain P-Channel MOSFETs Provides High

Level of Integration and Very Low RDS(on)

32nC 15nC 3.2nC 62nC 23nC -1.8V

DirectFET™ ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF9394MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced

DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only

0.54 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB

assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is

followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to

maximize thermal transfer in power systems, improving previous best thermal resistance by 80%

Standard Pack

Orderable Part Number

Package Type

Note

Form

Quantity

IRF9394MTRPbF

DirectFET Medium Can

Tape and Reel

4800

“TR” suffix

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V 

-30

±20

-14

-11

-75

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V 

Pulsed Drain Current 

-110

I_DM

14.0

12.0

10.0

8.0

= -11A

= -24V

= -15V

= -14A

VDS= -6V

6.0

= 125°C

= 25°C

4.0

2.0

0.0

10 12 14 16 18 20

Total Gate Charge (nC)

-V

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On– Resistance vs. Gate Voltage

Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage

Notes:

 Click on this section to link to the appropriate technical paper.

 Click on this section to link to the DirectFET Website.

 Surface mounted on 1 in. square Cu board, steady state.

 TC measured with thermocouple mounted to top (Drain) of part.

 Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

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July 9, 2014

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与IRF9394MTRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9395MPBF	INFINEON	获取价格	Isolation Switch for Input Power or Battery Application
IRF9395MTR1PBF	INFINEON	获取价格	Isolation Switch for Input Power or Battery Application
IRF9395MTRPBF	INFINEON	获取价格	Isolation Switch for Input Power or Battery Application
IRF9410	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
IRF9410PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF9510	VISHAY	获取价格	Power MOSFET
IRF9510	KERSEMI	获取价格	Power MOSFET
IRF9510	INTERSIL	获取价格	3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
IRF9510	INFINEON	获取价格	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
IRF9510	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal

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