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IRF9395MTR1PBF

更新时间： 2024-11-18 12:03:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体电池开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
9页 298K
描述
Isolation Switch for Input Power or Battery Application

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IRF9395MTR1PBF 数据手册

 浏览型号IRF9395MTR1PBF的Datasheet PDF文件第2页浏览型号IRF9395MTR1PBF的Datasheet PDF文件第3页浏览型号IRF9395MTR1PBF的Datasheet PDF文件第4页浏览型号IRF9395MTR1PBF的Datasheet PDF文件第5页浏览型号IRF9395MTR1PBF的Datasheet PDF文件第6页浏览型号IRF9395MTR1PBF的Datasheet PDF文件第7页 
PD - 96332A  
IRF9395MPbF  
IRF9395MTRPbF  
DirectFET™ dual P-Channel Power MOSFET ‚  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
-30V max ±20V max  
Ω
Ω
5.3m @-10V 9.0m @-4.5V  
Applications  
Qg tot  
Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Isolation Switch for Input Power or Battery Application  
32nC  
15nC  
3.2nC  
62nC  
23nC  
-1.8V  
Features and Benefits  
Q1-Q2  
l Environmentaly Friendly Product  
G
G
l RoHs Compliant Containing no Lead,  
no Bromide and no Halogen  
S
S
S
S
D
D
l Dual Common-Drain P-Channel MOSFETs Provides  
High Level of Integration and Very Low RDS(on)  
DirectFET™ ISOMETRIC  
MC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
MC  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging  
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4800  
1000  
IRF9395MTRPbF  
IRF9395MTR1PbF  
DirectFET Medium Can  
DirectFET Medium Can  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±20  
-14  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
-11  
@ TA = 70°C  
@ TC = 25°C  
A
-75  
-110  
DM  
24  
20  
16  
12  
8
14.0  
I = -11A  
I
= -14A  
D
D
V
= -24V  
= -15V  
12.0  
10.0  
8.0  
DS  
DS  
V
VDS= -6V  
T
= 125°C  
= 25°C  
6.0  
J
4.0  
4
2.0  
T
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
20  
Q
40  
60  
80  
Total Gate Charge (nC)  
-V  
Gate -to -Source Voltage (V)  
G
GS,  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
www.irf.com  
1
12/2/10  
1234567...9

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IRF9395MTR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9395MTRPBF INFINEON

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 Isolation Switch for Input Power or Battery Application

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