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IRF9395MTRPBF PDF预览

IRF9395MTRPBF

更新时间： 2024-11-18 12:03:43
品牌 Logo 应用领域
英飞凌 - INFINEON 电池开关
页数 文件大小 规格书
9页 298K
描述
Isolation Switch for Input Power or Battery Application

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中文翻译

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IRF9395MTRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.33
外壳连接：DRAIN配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：14 A最大漏源导通电阻：0.007 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：57 W
最大脉冲漏极电流 (IDM)：110 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF9395MTRPBF 数据手册

 浏览型号IRF9395MTRPBF的Datasheet PDF文件第2页浏览型号IRF9395MTRPBF的Datasheet PDF文件第3页浏览型号IRF9395MTRPBF的Datasheet PDF文件第4页浏览型号IRF9395MTRPBF的Datasheet PDF文件第5页浏览型号IRF9395MTRPBF的Datasheet PDF文件第6页浏览型号IRF9395MTRPBF的Datasheet PDF文件第7页 
PD - 96332A  
IRF9395MPbF  
IRF9395MTRPbF  
DirectFET™ dual P-Channel Power MOSFET ‚  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
-30V max ±20V max  
Ω
Ω
5.3m @-10V 9.0m @-4.5V  
Applications  
Qg tot  
Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Isolation Switch for Input Power or Battery Application  
32nC  
15nC  
3.2nC  
62nC  
23nC  
-1.8V  
Features and Benefits  
Q1-Q2  
l Environmentaly Friendly Product  
G
G
l RoHs Compliant Containing no Lead,  
no Bromide and no Halogen  
S
S
S
S
D
D
l Dual Common-Drain P-Channel MOSFETs Provides  
High Level of Integration and Very Low RDS(on)  
DirectFET™ ISOMETRIC  
MC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
MC  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging  
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4800  
1000  
IRF9395MTRPbF  
IRF9395MTR1PbF  
DirectFET Medium Can  
DirectFET Medium Can  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±20  
-14  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
-11  
@ TA = 70°C  
@ TC = 25°C  
A
-75  
-110  
DM  
24  
20  
16  
12  
8
14.0  
I = -11A  
I
= -14A  
D
D
V
= -24V  
= -15V  
12.0  
10.0  
8.0  
DS  
DS  
V
VDS= -6V  
T
= 125°C  
= 25°C  
6.0  
J
4.0  
4
2.0  
T
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
20  
Q
40  
60  
80  
Total Gate Charge (nC)  
-V  
Gate -to -Source Voltage (V)  
G
GS,  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
www.irf.com  
1
12/2/10  
1234567...9

中文翻译

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IRF9395MTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9395MTR1PBF INFINEON

完全替代

 Isolation Switch for Input Power or Battery Application

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