Datasheet > IRF9510

IRF9510

更新时间： 2024-11-17 22:31:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	63K
描述
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

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替代型号

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IRF9510 数据手册

IRF9510

Data Sheet

July 1999

File Number 2214.4

3.0A, 100V, 1.200 Ohm, P-Channel Power

MOSFET

Features

• 3.0A, 100V

[ /Title

(IRF95

10)

This P-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 1.200Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

/Sub-

ject (-

3.0A, -

100V,

1.200

Ohm,

P-Chan-

nel

Power

MOS-

FET)

/Autho

r ()

Symbol

Formerly developmental type TA17541.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9510

TO-220AB

NOTE: When ordering, include the entire part number.

/Key-

words

(Inter-

sil

Corpo-

ration,

P-Chan-

nel

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

Power

MOS-

FET,

DRAIN

(FLANGE)

TO-

220AB

)

/Cre-

ator ()

/DOCI

NFO

pdf-

mark

[

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

5-3

12 3 4 5 6 7

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IRF9510 替代型号

型号	品牌	替代类型	描述	数据表
SIHF9510-E3	VISHAY	功能相似	Power MOSFET
IRF9510	VISHAY	功能相似	Power MOSFET

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