Datasheet > IRF9395MPBF

IRF9395MPBF

更新时间： 2024-11-18 12:03:43

品牌	Logo	应用领域
英飞凌 - INFINEON		电池开关
页数	文件大小	规格书
9页	298K
描述
Isolation Switch for Input Power or Battery Application

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中文翻译

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IRF9395MPBF 数据手册

PD - 96332A

IRF9395MPbF

IRF9395MTRPbF

DirectFET dual P-Channel Power MOSFET

Typical values (unless otherwise specified)

V_DSS

V_GS

R_DS(on)

-30V max ±20V max

Ω

5.3m @-10V 9.0m @-4.5V

Applications

Q_{g tot}

Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

l Isolation Switch for Input Power or Battery Application

32nC

15nC

3.2nC

62nC

23nC

-1.8V

Features and Benefits

Q1-Q2

l Environmentaly Friendly Product

l RoHs Compliant Containing no Lead,

no Bromide and no Halogen

l Dual Common-Drain P-Channel MOSFETs Provides

High Level of Integration and Very Low RDS(on)

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging

to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4800

1000

IRF9395MTRPbF

IRF9395MTR1PbF

DirectFET Medium Can

Absolute Maximum Ratings

Max.

-30

Parameter

Units

V_DS

Drain-to-Source Voltage

±20

-14

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

-11

@ T_A= 70°C

@ T_C= 25°C

-75

-110

14.0

I = -11A

= -14A

= -24V

= -15V

12.0

10.0

8.0

VDS= -6V

= 125°C

= 25°C

6.0

4.0

2.0

0.0

10 12 14 16 18 20

Total Gate Charge (nC)

-V

Gate -to -Source Voltage (V)

GS,

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

12/2/10

12 3 4 5 6 7...9

中文翻译

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与IRF9395MPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9395MTR1PBF	INFINEON	获取价格	Isolation Switch for Input Power or Battery Application
IRF9395MTRPBF	INFINEON	获取价格	Isolation Switch for Input Power or Battery Application
IRF9410	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
IRF9410PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF9510	VISHAY	获取价格	Power MOSFET
IRF9510	KERSEMI	获取价格	Power MOSFET
IRF9510	INTERSIL	获取价格	3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
IRF9510	INFINEON	获取价格	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
IRF9510	SAMSUNG	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal
IRF9510-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal

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