5秒后页面跳转
IRF9392PBF PDF预览

IRF9392PBF

更新时间: 2024-10-30 19:45:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 285K
描述
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

IRF9392PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.69雪崩能效等级(Eas):102 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):9.8 A最大漏极电流 (ID):9.8 A
最大漏源导通电阻:0.0175 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF9392PBF 数据手册

 浏览型号IRF9392PBF的Datasheet PDF文件第2页浏览型号IRF9392PBF的Datasheet PDF文件第3页浏览型号IRF9392PBF的Datasheet PDF文件第4页浏览型号IRF9392PBF的Datasheet PDF文件第5页浏览型号IRF9392PBF的Datasheet PDF文件第6页浏览型号IRF9392PBF的Datasheet PDF文件第7页 
PD - 97571  
IRF9392PbF  
HEXFET® Power MOSFET  
VDS  
-30  
25  
V
V
VGS max  
±
RDS(on) max  
(@VGS = -10V)  
17.5  
-9.8  
m
ID  
A
(@TA = 25°C)  
SO-8  
Applications  
Adaptor Input Switch for Notebook PC  
Features and Benefits  
Features  
Resulting Benefits  
25V VGS max  
Industry-Standard SO8 Package  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Direct Drive at High VGS  
Multi-Vendor Compatibility  
Environmentally Friendlier  
Orderable part number  
Package Type  
Standard Pack  
Form Quantity  
Note  
IRF9392PbF  
IRF9392TRPbF  
SO8  
SO8  
Tube/Bulk  
Tape and Reel  
95  
4000  
Absolute Maximum Ratings  
Max.  
Parameter  
Drain-to-Source Voltage  
Units  
VDS  
-30  
±25  
-9.8  
-7.8  
-80  
2.5  
V
VGS  
Gate-to-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
W
W/°C  
°C  
1.6  
0.02  
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
TJ  
-55 to + 150  
TSTG  
Storage Temperature Range  
Notes  through † are on page 2  
www.irf.com  
1
09/30/2010  

IRF9392PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9392TRPBF INFINEON

功能相似

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M

与IRF9392PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF9392TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M
IRF9393 INFINEON

获取价格

The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRF9393PBF INFINEON

获取价格

Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, M
IRF9393TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, M
IRF9394MTRPBF INFINEON

获取价格

Power Field-Effect Transistor
IRF9395MPBF INFINEON

获取价格

Isolation Switch for Input Power or Battery Application
IRF9395MTR1PBF INFINEON

获取价格

Isolation Switch for Input Power or Battery Application
IRF9395MTRPBF INFINEON

获取价格

Isolation Switch for Input Power or Battery Application
IRF9410 INFINEON

获取价格

Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
IRF9410PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET