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IRF9383MTR1PBF

更新时间： 2024-11-20 19:58:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 278K
描述
Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

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IRF9383MTR1PBF 数据手册

 浏览型号IRF9383MTR1PBF的Datasheet PDF文件第2页浏览型号IRF9383MTR1PBF的Datasheet PDF文件第3页浏览型号IRF9383MTR1PBF的Datasheet PDF文件第4页浏览型号IRF9383MTR1PBF的Datasheet PDF文件第5页浏览型号IRF9383MTR1PBF的Datasheet PDF文件第6页浏览型号IRF9383MTR1PBF的Datasheet PDF文件第7页 
IRF9383MPbF  
DirectFET® P-Channel Power MOSFET ‚  
Typical values (unless otherwise specified)  
Applications  
VDSS  
-30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
l Isolation Switch for Input Power or Battery Application  
l High Side Switch for Inverter Applications  
2.3mΩ@-10V 3.8mΩ@-4.5V  
Qg tot  
Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
Features and Benefits  
67nC  
29nC  
9.4nC 315nC 59nC  
-1.8V  
l Environmentaly Friendly Product  
l RoHs Compliant Containing no Lead,  
no Bromide and no Halogen  
S
G
D
l Common-Drain P-Channel MOSFETs Provides  
High Level of Integration and Very Low RDS(on)  
D
S
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
MC  
Description  
The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET®  
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET®  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance  
by 80%.  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4800  
1000  
IRF9383MTRPbF  
IRF9383MTR1PbF  
DirectFET Medium Can  
DirectFET Medium Can  
"TR1" suffix EOL notice #264  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±20  
-22  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
-17  
@ TA = 70°C  
@ TC = 25°C  
A
-160  
-180  
DM  
12  
10  
8
14.0  
12.0  
10.0  
8.0  
I = -18A  
D
I
= -22A  
D
V
V
V
= -24V  
= -15V  
= -6.0V  
DS  
DS  
DS  
6
6.0  
T = 125°C  
J
4
4.0  
2
2.0  
T
= 25°C  
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
20 40 60 80 100 120 140 160 180  
Total Gate Charge (nC)  
Q
G
-V  
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
February 28, 2014  
1
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IRF9383MTR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9383MTRPBF INFINEON

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