Datasheet > IRF9389TRPBF

IRF9389TRPBF

更新时间： 2024-10-30 12:30:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
14页	249K
描述
High and Low Side Switches for Inverter

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中文翻译

获取价格

数据手册
替代型号

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IRF9389TRPBF 数据手册

IRF9389PbF

HEXFET^®Power MOSFET

N-CH P-CH

N-CHANNEL MOSFET

V_DS

-30

R_{DS(on) max}

Q_{g (typical)}

m

6.8

8.1

P-CHANNEL MOSFET

I_D

Top View

SO-8

6.8

-4.6

(@T_A= 25°C)

Applications

HighandLowSideSwitchesforInverter

High and Low Side Switches for Generic Half-Bridge

Features

Benefits

High and low-side MOSFETs in a single package

High-side P-Channel MOSFET

Increased power density

Easier drive circuitry

Industry-standard pinout

results in Multi-vendor compatibility

Compatible with existing surface mount techniques

RoHS compliant containing no Lead, no Bromide and no Halogen

MSL1, Consumer qualification

Easier manufacturing

Environmentally friendlier

Increased reliability



Base Part Number Package Type

Standard Pack

Orderable part number

Form

Tube/Bulk

Quantity

IRF9389PbF

IRF9389TRPbF

IRF9389PbF

SO-8

Tape and Reel

4000

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

±20

V_GS

Gate-to-Source Voltage

±20

6.8

5.4

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-4.6

-3.7

-23

2.0

1.3

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

W/°C

°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.016

-55 to + 150

T_J

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max

62.5

Units

R_

°C/W

January 14, 2013

12 3 4 5 6 7...14

中文翻译

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IRF9389TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF9389PBF	INFINEON	完全替代	High and Low Side Switches for Inverter

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