Datasheet > IRF9389TR

IRF9389TR

更新时间： 2024-10-15 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
13页	462K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V ;P：-30V;持续漏极电流（Id）（在25°C时）:N：6.8A;P： -4.6A;Vgs(th)(V):±20;漏源导通电阻:N：27mΩ ;P： 64mΩ@10V

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IRF9389TR 数据手册

UMW

IRF9389

N+P-Channel MOSFET

Applications

N-CHANNEL MOSFET

HighandLowSideSwitchesforInverter

High and Low Side Switches for Generic Half-Bridge

Features

N-Channel

P-CHANNEL MOSFET

V_DS(V) = 30V

I_D= 6.8A (V_GS= 10V)

•

Top View

•

R_DS(ON)< 27mΩ (V_GS= 10V)

P-Channel

_DS(V) = -30V

•

I_D= -4.6A (V_GS= -10V)

R_DS(ON)< 64mΩ (V_GS= -10V)

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

±20

V_GS

Gate-to-Source Voltage

±20

6.8

5.4

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-4.6

-3.7

-23

2.0

1.3

0.016

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

W/°C

°C

Power Dissipation

Linear Derating Factor

Operating Junction and

-55 to + 150

T_J

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

Max

62.5

Units

R_

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...13

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