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IRF9333PBF PDF预览

IRF9333PBF

更新时间: 2024-11-20 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 308K
描述
HEXFET Power MOSFET

IRF9333PBF 数据手册

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PD - 97523  
IRF9333PbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
RDS(on) max  
(@VGS = -10V)  
19.4  
m
RDS(on) max  
(@VGS = -4.5V)  
32.5  
14  
m
Qg (typical)  
nC  
A
SO-8  
ID  
-9.2  
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
Features and Benefits  
Features  
Resulting Benefits  
Industry-Standard SO8 Package  
Multi-Vendor Compatibility  
Environmentally Friendlier  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tube/Bulk  
Quantity  
95  
IRF9333PbF  
IRF9333TRPbF  
SO8  
SO8  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
GS  
-9.2  
I
I
I
@ TA = 25°C  
D
D
-7.3  
A
@ TA = 70°C  
-75  
DM  
2.5  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
W/°C  
°C  
1.6  
Power Dissipation  
0.02  
Linear Derating Factor  
-55 to + 150  
Operating Junction and  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 2  
www.irf.com  
1
6/21/10  

IRF9333PBF 替代型号

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