5秒后页面跳转
IRF9358PBF PDF预览

IRF9358PBF

更新时间: 2024-11-20 12:30:27
品牌 Logo 应用领域
英飞凌 - INFINEON 电池开关电脑PC
页数 文件大小 规格书
8页 280K
描述
Charge and Discharge Switch for Notebook PC Battery Application

IRF9358PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.28
雪崩能效等级(Eas):210 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):9.2 A
最大漏极电流 (ID):9.2 A最大漏源导通电阻:0.0163 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):73 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF9358PBF 数据手册

 浏览型号IRF9358PBF的Datasheet PDF文件第2页浏览型号IRF9358PBF的Datasheet PDF文件第3页浏览型号IRF9358PBF的Datasheet PDF文件第4页浏览型号IRF9358PBF的Datasheet PDF文件第5页浏览型号IRF9358PBF的Datasheet PDF文件第6页浏览型号IRF9358PBF的Datasheet PDF文件第7页 
PD - 97616  
IRF9358PbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
S2  
G2 2  
S1  
G1 4  
1
8
7
6
5
D2  
RDS(on) max  
(@VGS = -10V)  
16.3  
m
Ω
D2  
D1  
D1  
RDS(on) max  
(@VGS = -4.5V)  
3
23.8  
19  
m
Ω
Qg (typical)  
nC  
A
SO-8  
ID  
-9.2  
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
Features and Benefits  
Features  
Resulting Benefits  
results in  
Industry-Standard SO-8 Package  
Multi-Vendor Compatibility  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Environmentally Friendlier  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tube/Bulk  
Quantity  
95  
IRF9358PbF  
IRF9358TRPbF  
SO8  
SO8  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
GS  
-9.2  
I
I
I
@ TA = 25°C  
D
D
-7.3  
A
@ TA = 70°C  
-73  
DM  
2.0  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
W/°C  
°C  
1.3  
Power Dissipation  
0.016  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 2  
www.irf.com  
1
1/2/11  

IRF9358PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9358TRPBF INFINEON

类似代替

Charge and Discharge Switch for Notebook PC Battery Application

与IRF9358PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF9358TRPBF INFINEON

获取价格

Charge and Discharge Switch for Notebook PC Battery Application
IRF9362 INFINEON

获取价格

-30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF9362PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9362PBF_1 INFINEON

获取价格

HEXFETPower MOSFET Industry-Standard SO-8 Package
IRF9362PBF-1 INFINEON

获取价格

Power Field-Effect Transistor
IRF9362TRPBF INFINEON

获取价格

HEXFETPower MOSFET Industry-Standard SO-8 Package
IRF9362TRPBF-1 INFINEON

获取价格

Power Field-Effect Transistor
IRF9383MPBF INFINEON

获取价格

Transistor,
IRF9383MTR1PBF INFINEON

获取价格

Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, P-Channel, Silicon, Me
IRF9383MTRPBF INFINEON

获取价格

Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, P-Channel, Silicon, Me