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IRF9362PBF_1 PDF预览

IRF9362PBF_1

更新时间: 2024-11-20 12:27:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 292K
描述
HEXFETPower MOSFET Industry-Standard SO-8 Package

IRF9362PBF_1 数据手册

 浏览型号IRF9362PBF_1的Datasheet PDF文件第2页浏览型号IRF9362PBF_1的Datasheet PDF文件第3页浏览型号IRF9362PBF_1的Datasheet PDF文件第4页浏览型号IRF9362PBF_1的Datasheet PDF文件第5页浏览型号IRF9362PBF_1的Datasheet PDF文件第6页浏览型号IRF9362PBF_1的Datasheet PDF文件第7页 
PD - 96312A  
IRF9362PbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
RDS(on) max  
(@VGS = -10V)  
21.0  
m
RDS(on) max  
(@VGS = -4.5V)  
32.0  
13  
m
Qg (typical)  
nC  
A
SO-8  
Top View  
ID  
-8.0  
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
Features and Benefits  
Features  
Resulting Benefits  
results in  
Industry-Standard SO-8 Package  
Multi-Vendor Compatibility  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Environmentally Friendlier  
Orderable part number  
Package Type  
Standard Pack  
Form Quantity  
Note  
IRF9362PbF  
IRF9362TRPbF  
SO8  
SO8  
Tube/Bulk  
Tape and Reel  
95  
4000  
Absolute Maximum Ratings  
Max.  
Parameter  
Drain-to-Source Voltage  
Units  
VDS  
-30  
±20  
-8.0  
-6.4  
-64  
2.0  
V
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
A
@ TA = 70°C  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
D
D
W
W/°C  
°C  
1.3  
Power Dissipation  
0.016  
Linear Derating Factor  
Operating Junction and  
-55 to + 150  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 2  
www.irf.com  
1
11/18/10  

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