Datasheet > IRF630

IRF630

更新时间： 2024-11-11 11:59:23

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	106K
描述
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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中文翻译

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数据手册

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IRF630 数据手册

SEMICONDUCTORS

IRF630

N CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

FEATURE

N channel in a plastic TO220 package.

They are intended for use in high speed switching,

uninterruptible power supply, motor control, audio amplifiers,

industrial actuators.

DC-DC & DC-AC converters for telecom, industrial and

consumer environment.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_DS

I_DS

Drain-Source Voltage

Continuous Drain Current T_C= 37°C

200

I_DM

I_AR

Pulsed Drain Current T_C= 25°C

Avalanche Current, Limited by T_jmax

Avalanche Energy, Single pulse

I_D= 2.4 A, V_DD= 50 V, R_GS= 25 Ω, L= 56.3 µH, T_j= 25°C

Avalanche Energy, Periodic Limited by T_jmax

Gate-Source Voltage

Drain-Source on Resistance

Power Dissipation at Case Temperature T_C= 25°C

Operating Temperature

E_AS

250

E_AR

V_GS

R_DS(on)

P_T

t_J

t_stg

7.4

0.4

Ω

-55 to +150

°C

Storage Temperature range

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJC

R_thJA

Thermal Resistance, junction-case

Thermal Resistance, junction-ambient

1.7

°C/W

01/10/2012

COMSET SEMICONDUCTORS

1/3

12 3

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与IRF630相关器件

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IRF630_06	STMICROELECTRONICS	获取价格	N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP M
IRF630-001	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-006	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630-010PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-012PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	ISC	获取价格	isc N-Channel MOSFET Transistor
IRF630A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF630A	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220