Datasheet > IRF630_06

IRF630_06

更新时间： 2024-09-13 04:23:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	337K
描述
N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET

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IRF630_06 数据手册

IRF630

IRF630FP

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP

Mesh overlay™ II Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

IRF630

200V

<0.40Ω

IRF630FP

■ Extremely high dv/dt capability

■ Very low intrinsic capacitances

■ Gate charge minimized

TO-220

TO-220FP

Description

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

IRF630

TO-220

Tube

IRF630FP

TO-220FP

August 2006

Rev 9

1/14

www.st.com

12 3 4 5 6 7...14

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IRF630-010PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
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IRF630A	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220
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