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IRF630FP PDF预览

IRF630FP

更新时间: 2024-02-27 00:27:05
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 107K
描述
N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

IRF630FP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.03
其他特性:AVALANCHE RATED雪崩能效等级(Eas):250 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):9 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF630FP 数据手册

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IRF630  
IRF630FP  
N - CHANNEL 200V - 0.35- 9A - TO-220/FP  
MESH OVERLAY MOSFET  
TYPE  
IRF630  
IRF630FP  
VDSS  
RDS(on)  
ID  
200 V  
200 V  
< 0.40 Ω  
< 0.40 Ω  
9 A  
9 A  
TYPICAL RDS(on) = 0.35 Ω  
EXTREMELY HIGH dV/dt CAPABILITY  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
DESCRIPTION  
3
2
2
This power MOSFET is designed using he  
company’s consolidated strip layout-based MESH  
OVERLAY process. This technology matches  
and improves the performances compared with  
standardparts from various sources.  
1
1
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT SWITCHING  
UNINTERRUPTIBLE POWER SUPPLY (UPS)  
DC/DC COVERTERS FOR TELECOM,  
INDUSTRIAL, AND LIGHTING EQUIPMENT.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
IRF630  
IRF630FP  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k  
Gate-source Voltage  
200  
200  
V
V
)
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
9
9(**)  
5.7(**)  
36  
A
ID  
5.7  
36  
75  
0.6  
5
A
IDM()  
Ptot  
A
o
Total Dissipation at Tc = 25 C  
25  
W
Derating Factor  
0.20  
5
W/oC  
V/ns  
V
oC  
oC  
dv/dt( ) Peak Diode Recovery voltage slope  
1
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
µ
≤ ≤  
V(BR)DSS, Tj TJMAX  
( ) Pulse width limited by safe operating area  
( 1) ISD 9A, di/dt 300 A/ s, VDD  
First Digit of the Datecode Being Z or K IdentifiesSilicon Characterized in this Datasheet  
(**) Limited only by Maximum Temperature Allowed  
1/9  
February 1999  

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