生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.6 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRF630A16A | MOTOROLA | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRF630AF | MOTOROLA | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRF630AJ | MOTOROLA | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRF630AJ69Z | FAIRCHILD | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRF630B | NJSEMI | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 |
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IRF630B | FAIRCHILD | 200V N-Channel MOSFET |
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