是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 18 weeks |
风险等级: | 5.76 | 雪崩能效等级(Eas): | 616 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 23 A | 最大漏源导通电阻: | 0.14 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 56 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IPW50R140CP_08 | INFINEON | CoolMOS Power Transistor |
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IPW50R190CE | INFINEON | 500V CoolMOS⢠CE Power MOSFET |
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IPW50R190CEFKSA1 | INFINEON | Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IPW50R199CP | INFINEON | CoolMOS Power Transistor |
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IPW50R250CP | INFINEON | CoolMOSTM Power Transistor Features New revolutionary high voltage technology |
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IPW50R250CPFKSA1 | INFINEON | Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met |
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