Datasheet > IPW60R016CM8

IPW60R016CM8

更新时间： 2024-11-22 17:15:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1415K
描述
The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPW60R016CM8 数据手册

IPW60R016CM8

MOSFET

PG-TO247-3

600VꢀCoolMOSªꢀCM8ꢀPowerꢀTransistor

TheꢀCoolMOS™ꢀ8thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor

highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction

(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V

CoolMOS™ꢀCM8ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀ7.

ItꢀcombinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellent

easeꢀofꢀuse,ꢀe.gꢀlowꢀringingꢀtendency,ꢀimplementedꢀfastꢀbodyꢀdiodeꢀ(CFD)

forꢀallꢀproductsꢀwithꢀoutstandingꢀrobustnessꢀagainstꢀhardꢀcommutationꢀand

excellentꢀESDꢀcapability.ꢀFurthermore,ꢀextremelyꢀlowꢀswitchingꢀand

conductionꢀlossesꢀofꢀCM8,ꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmore

efficient.

Tab

Features

Drain

Pin 2, Tab

•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀtopologiesꢀthanksꢀtoꢀan

ꢀꢁꢀoutstandingꢀcommutationꢀruggedness

•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses

•ꢀBestꢀinꢀclassꢀR_DS(on)ꢀperꢀpackageꢀproductsꢀenabledꢀbyꢀultraꢀlowꢀR_DS(on)*A

Gate

Pin 1

Source

Pin 3

*1: Internal body diode

Benefits

•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage

ꢀꢁꢀacrossꢀPFCꢀandꢀPWMꢀstages

•ꢀSimplifiedꢀthermalꢀmanagementꢀthanksꢀtoꢀourꢀadvancedꢀdieꢀattach

ꢀꢁꢀtechnique

•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith

ꢀꢁꢀsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀstateꢀofꢀtheꢀart

ꢀꢁꢀESDꢀprotection

•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges

Potentialꢀapplications

•ꢀPowerꢀsuppliesꢀandꢀconverters

•ꢀPFCꢀstagesꢀ&ꢀLLCꢀresonantꢀconverters

•ꢀHighꢀefficiencyꢀswitchingꢀapplications

•ꢀe.g.ꢀServer,ꢀTelecom,ꢀEVꢀCharging,ꢀUPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

Unit

mΩ

Q_g,typ

171

505

22.9

1300

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

ESD class (HBM)

µJ

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

60R016C8

RelatedꢀLinks

IPW60R016CM8

PG-TO247-3

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2024-03-21

12 3 4 5 6 7...14

中文翻译

下载PDF

与IPW60R016CM8相关器件

型号	品牌	获取价格	描述	数据表
IPW60R017C7	INFINEON	获取价格	Power Field-Effect Transistor, 109A I(D), 600V, 0.017ohm, 1-Element, N-Channel, Silicon, M
IPW60R017C7XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 109A I(D), 600V, 0.017ohm, 1-Element, N-Channel, Silicon, M
IPW60R018CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPW60R024CFD7	INFINEON	获取价格	Power Field-Effect Transistor,
IPW60R024P7	INFINEON	获取价格	Power Field-Effect Transistor,
IPW60R031CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPW60R037CM8	INFINEON	获取价格	The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET fam
IPW60R037CSFD	INFINEON	获取价格	Power Field-Effect Transistor,
IPW60R037P7	INFINEON	获取价格	600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMO
IPW60R037P7XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide

与IPW60R016CM8相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

IPW60R016CM8

IPW60R016CM8 数据手册

与IPW60R016CM8相关器件

与IPW60R016CM8相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IPW60R016CM8

IPW60R016CM8 数据手册

与IPW60R016CM8相关器件

与IPW60R016CM8相关文章

您还可以找

您在本页遇到什么问题？