5秒后页面跳转
IPP80N04S4-04 PDF预览

IPP80N04S4-04

更新时间: 2024-11-23 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 162K
描述
OptiMOS-T2 Power-Transistor

IPP80N04S4-04 数据手册

 浏览型号IPP80N04S4-04的Datasheet PDF文件第2页浏览型号IPP80N04S4-04的Datasheet PDF文件第3页浏览型号IPP80N04S4-04的Datasheet PDF文件第4页浏览型号IPP80N04S4-04的Datasheet PDF文件第5页浏览型号IPP80N04S4-04的Datasheet PDF文件第6页浏览型号IPP80N04S4-04的Datasheet PDF文件第7页 
IPB80N04S4-04  
IPI80N04S4-04, IPP80N04S4-04  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
4.2  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0404  
4N0404  
4N0404  
IPB80N04S4-04  
IPI80N04S4-04  
IPP80N04S4-04  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
80  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
320  
100  
80  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40A  
mJ  
A
I AS  
-
VGS  
-
±20  
71  
V
Ptot  
T C=25°C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2010-04-06  

IPP80N04S4-04 替代型号

型号 品牌 替代类型 描述 数据表
IPI80N04S3-H4 INFINEON

功能相似

OptiMOS-T Power-Transistor
FDI8441 FAIRCHILD

功能相似

N-Channel PowerTrench㈢ MOSFET

与IPP80N04S4-04相关器件

型号 品牌 获取价格 描述 数据表
IPP80N04S4L-04 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP80N04S4L04AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Me
IPP80N06S2-05 INFINEON

获取价格

OptiMOS Power-Transistor
IPP80N06S2-07 INFINEON

获取价格

OptiMOS Power-Transistor
IPP80N06S207AKSA4 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
IPP80N06S2-08 INFINEON

获取价格

OptiMOS Power-Transistor
IPP80N06S208AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IPP80N06S208AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
IPP80N06S2-09 INFINEON

获取价格

OptiMOS Power-Transistor
IPP80N06S209AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me