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IPP80N06S209AKSA2 PDF预览

IPP80N06S209AKSA2

更新时间: 2024-09-28 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
8页 157K
描述
Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IPP80N06S209AKSA2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:10 weeks风险等级:1.71
雪崩能效等级(Eas):370 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0091 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):320 A
参考标准:AEC-Q101表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

IPP80N06S209AKSA2 数据手册

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IPB80N06S2-09  
IPP80N06S2-09  
OptiMOS® Power-Transistor  
Product Summary  
Features  
VDS  
55  
8.8  
80  
V
• N-channel - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (lead free)  
• Ultra low Rds(on)  
I D  
PG-TO263-3-2  
PG-TO220-3-1  
• 100% Avalanche tested  
Type  
Package  
Ordering Code Marking  
IPB80N06S2-09  
IPP80N06S2-09  
PG-TO263-3-2  
PG-TO220-3-1  
SP0002-18741  
SP0002-18740  
2N0609  
2N0609  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
Gate source voltage4)  
I D,pulse  
EAS  
T C=25 °C  
I D= 80 A  
320  
370  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
190  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2006-03-13  

IPP80N06S209AKSA2 替代型号

型号 品牌 替代类型 描述 数据表
IPP80N06S209AKSA1 INFINEON

类似代替

Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me

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