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IPP80N06S3-07 PDF预览

IPP80N06S3-07

更新时间: 2024-09-28 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 191K
描述
OptiMOS-T Power-Transistor

IPP80N06S3-07 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.57
其他特性:AVALANCHE RATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0068 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):135 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP80N06S3-07 数据手册

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IPB80N06S3-07  
IPI80N06S3-07, IPP80N06S3-07  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
55  
6.5  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB80N06S3-07  
IPI80N06S3-07  
IPP80N06S3-07  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N0607  
3N0607  
3N0607  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
74  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
I D,pulse  
EAS  
T C=25 °C  
I D=40 A  
320  
455  
mJ  
A
I AS  
Avalanche current, single pulse  
80  
Gate source voltage3)  
VGS  
±20  
V
Ptot  
T C=25 °C  
Power dissipation  
135  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2007-11-07  

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